N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 7.44A continuous drain current. This single MOSFET offers a low 17mOhm drain-source resistance at 10V gate-source voltage. The component is housed in an 8-pin DFN EP package with exposed pad, measuring 3x3x0.58mm, designed for surface mounting. Key electrical characteristics include a typical gate charge of 9.47nC at 5V and input capacitance of 798pF at 10V. Operating temperature range spans from -55°C to 150°C.
PackageDFN EP
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes DMG4800LFG technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | DFN EP |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3 |
| Package Width (mm) | 3 |
| Package Height (mm) | 0.58 |
| Seated Plane Height (mm) | 0.6 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 7.44A |
| Maximum Drain Source Resistance | 17@10VmOhm |
| Typical Gate Charge @ Vgs | 9.47@5VnC |
| Typical Input Capacitance @ Vds | 798@10VpF |
| Maximum Power Dissipation | 940mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Diodes DMG4800LFG Datasheet
Download the complete datasheet for Diodes DMG4800LFG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.