N-Channel MOSFET, a surface-mount electronic component in a TSOT package, offers a continuous drain current of 6A and a low drain-to-source on-resistance (Rds On) of 30mR. Featuring a drain-to-source voltage (Vdss) of 30V and a gate-to-source voltage (Vgs) of 20V, this single-channel transistor exhibits fast switching characteristics with a fall time of 2.8ns. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 1.75W and an input capacitance of 498pF. The component is supplied in tape and reel packaging and is RoHS and REACH SVHC compliant.
PackageTSOT
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMG6402LVT-7 technical specifications.
General
| Package/Case | TSOT |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.9mm |
| Input Capacitance | 498pF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.9ns |
| Turn-On Delay Time | 3.4ns |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG6402LVT-7 Datasheet
Download the complete datasheet for Diodes DMG6402LVT-7 to view detailed technical specifications.
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