Dual N-channel and P-channel MOSFET transistor for surface mount applications. Features a 30V drain-source voltage and a continuous drain current of 2.8A. Offers a low drain-source on-resistance of 60mR at a 10V gate-source voltage. Operates within a temperature range of -55°C to 150°C and is packaged in a compact SOT-23-6 (TSOT-23) case. This component is RoHS and REACH SVHC compliant.
PackageSOT-23-6
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes DMG6602SVT-7 technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 95mR |
| Fall Time | 3ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.9mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 840mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 3ns |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMG6602SVT-7 Datasheet
Download the complete datasheet for Diodes DMG6602SVT-7 to view detailed technical specifications.
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