
N-Channel Metal-Oxide Semiconductor FET, a surface mount small signal field-effect transistor. Features a continuous drain current of 10.5A and a drain to source voltage of 30V. Offers a low drain to source resistance of 15mR (Rds On Max 11mR) and a maximum power dissipation of 900mW. Operates within a temperature range of -55°C to 150°C, with a fall time of 5.1ns and turn-on delay time of 5.2ns. This component is lead-free, RoHS compliant, and REACH SVHC compliant.
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Diodes DMG7430LFG-7 technical specifications.
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.85mm |
| Input Capacitance | 1.281nF |
| Lead Free | Lead Free |
| Length | 3.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 22.3ns |
| Turn-On Delay Time | 5.2ns |
| Weight | 0.00254oz |
| Width | 3.35mm |
| RoHS | Compliant |
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