NPN silicon bipolar junction transistor featuring a 40V collector-emitter breakdown voltage and 200mA continuous collector current. This surface mount device operates with a 300MHz gain bandwidth product and offers a minimum hFE of 100. The transistor is housed in a compact SOT-363 plastic package, designed for tape and reel packaging. It supports a wide operating temperature range from -55°C to 150°C and is RoHS and REACH SVHC compliant.
Frequency300MHz
PackageSOT-363
Current Rating200mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes DMMT3904W-7-F technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
200mA
Current Rating
200mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
40V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
40V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMMT3904W-7-F Datasheet
Download the complete datasheet for Diodes DMMT3904W-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
