PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-26 surface mount package. Features a 40V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a 200mA Max Collector Current (I(C)). Offers a 250MHz Transition Frequency and a 400mV Collector-Emitter Saturation Voltage. Operates within a temperature range of -55°C to 150°C with a 225mW Max Power Dissipation. Lead-free and RoHS compliant.
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Diodes DMMT3906-7-F technical specifications.
| Package/Case | SOT-26 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector-emitter Voltage-Max | 400mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 250MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Weight | 0.001058oz |
| Width | 1.6mm |
| RoHS | Compliant |
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