N-channel silicon Metal-oxide Semiconductor FET for small signal applications. Features 12V drain-to-source voltage (Vdss) and 11A continuous drain current (ID). Offers low 10mΩ drain-to-source resistance (Rds On Max). Operates within a temperature range of -55°C to 150°C. Packaged in a compact U-DFN2020-6 (DFN EP) surface-mount plastic package.
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| Package/Case | DFN EP |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 16.8ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.58mm |
| Input Capacitance | 2.425nF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 690mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 57.6ns |
| Turn-On Delay Time | 7.6ns |
| Width | 2.05mm |
| RoHS | Compliant |
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