N-channel enhancement mode MOSFET featuring low on-resistance and high switching speed. Designed for efficient power management applications, this device offers a continuous drain current of 10A and a drain-source voltage rating of 100V. Its low gate charge and threshold voltage ensure fast and reliable operation in switching circuits.
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Technical Specifications
Diodes DMN10H120SFG-7 technical specifications.
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Diodes DMN10H120SFG-7 Datasheet
Download the complete datasheet for Diodes DMN10H120SFG-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.