N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET with a 20V Drain to Source Voltage (Vdss) and 540mA Continuous Drain Current (ID). Features 550mR Drain to Source Resistance (Rds On Max) and 8V Gate to Source Voltage (Vgs). This surface mount component, housed in a SOT-26 package, offers a max power dissipation of 225mW and operates within a temperature range of -65°C to 150°C. It is RoHS and REACH SVHC compliant.
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Diodes DMN2004DMK-7 technical specifications.
| Package/Case | SOT-26 |
| Continuous Drain Current (ID) | 540mA |
| Current Rating | 540mA |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| DC Rated Voltage | 20V |
| Width | 1.6mm |
| RoHS | Compliant |
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