N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOT-363 package. Features 20V Drain to Source Voltage (Vdss), 540mA Continuous Drain Current (ID), and 550mR Drain-source On Resistance-Max. Operates from -65°C to 150°C with a 1V Threshold Voltage and 8V Gate to Source Voltage (Vgs). Maximum Power Dissipation is 200mW.
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Diodes DMN2004DWK-7 technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 540mA |
| Current Rating | 540mA |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 550mR |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 550mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| DC Rated Voltage | 20V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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