N-Channel Silicon Metal-Oxide Semiconductor FET, a surface mount JFET in a SOT-523 plastic package. Features 20V Drain to Source Voltage (Vdss), 540mA Continuous Drain Current (ID), and 550mR Drain to Source Resistance (Rds On Max). Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW. Includes 8.5ns turn-on delay and 9.1ns fall time.
PackageSOT-523
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN2004TK-7 technical specifications.
General
| Package/Case | SOT-523 |
| Continuous Drain Current (ID) | 540mA |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9.1ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 8.5ns |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN2004TK-7 Datasheet
Download the complete datasheet for Diodes DMN2004TK-7 to view detailed technical specifications.
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