N-Channel Silicon Metal-oxide Semiconductor FET, featuring two elements and a 20V Drain to Source Voltage (Vdss). This surface mount transistor offers a continuous drain current (ID) of 540mA and a maximum drain-source on-resistance (Rds On Max) of 550mR. Operating across a temperature range of -65°C to 150°C, it boasts a maximum power dissipation of 250mW. The ultra-small SOT-563 package measures 1.6mm in length, 1.2mm in width, and 0.6mm in height, ideal for compact designs.
PackageSOT-563
MountingSurface Mount
PolarityN-CHANNEL
Power250mW
Quick Jump:
Technical Specifications
Diodes DMN2004VK-7 technical specifications.
General
Package/Case
SOT-563
Continuous Drain Current (ID)
540mA
Drain to Source Resistance
550mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
550mR
Fall Time
36.1ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
8V
Height
0.6mm
Input Capacitance
150pF
Lead Free
Lead Free
Length
1.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
250mW
Radiation Hardening
No
Rds On Max
550mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
53.5ns
Turn-On Delay Time
8ns
Weight
0.000106oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN2004VK-7 Datasheet
Download the complete datasheet for Diodes DMN2004VK-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
