DMN2004VK-7

N-Channel Silicon Metal-oxide Semiconductor FET, featuring two elements and a 20V Drain to Source Voltage (Vdss). This surface mount transistor offers a continuous drain current (ID) of 540mA and a maximum drain-source on-resistance (Rds On Max) of 550mR. Operating across a temperature range of -65°C to 150°C, it boasts a maximum power dissipation of 250mW. The ultra-small SOT-563 package measures 1.6mm in length, 1.2mm in width, and 0.6mm in height, ideal for compact designs.