N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in an ultra-small DFN package. Features include a 20V Drain-Source Voltage (Vdss), 200mA Continuous Drain Current (ID), and a maximum Drain-Source On Resistance (Rds On) of 1.5 Ohms. Operating temperature range spans from -65°C to 150°C, with a maximum power dissipation of 400mW. This component is RoHS and REACH SVHC compliant, supplied on tape and reel.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN2005LP4K-7 technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 200mA |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.5R |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.35mm |
| Input Capacitance | 41pF |
| Lead Free | Lead Free |
| Length | 1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.7ns |
| Turn-On Delay Time | 4.06ns |
| Width | 0.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN2005LP4K-7 Datasheet
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