N-Channel Silicon Metal-oxide Semiconductor FET, surface mount, with a continuous drain current of 6.9A and a drain to source voltage of 20V. Features a low drain to source resistance of 13mR and a threshold voltage of 1V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 610mW. Packaged in a TO-236-3 (SC-59) plastic package, this RoHS compliant component is supplied on tape and reel.
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| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 6.9A |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12.33ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.3mm |
| Input Capacitance | 1.149nF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 610mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 35.89ns |
| Turn-On Delay Time | 11.67ns |
| Weight | 0.000282oz |
| Width | 1.7mm |
| RoHS | Compliant |
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