N-Channel MOSFET, 20V Drain-Source Voltage (Vdss), 9.8A Continuous Drain Current (ID), and 20mΩ Drain-Source Resistance (Rds On Max). This single-element silicon FET features a 1V threshold voltage and 1.56W maximum power dissipation. It is housed in a surface-mount SOIC package with dimensions of 5mm length, 4mm width, and 1.5mm height, operating from -55°C to 150°C. Turn-on and turn-off delay times are 11.67ns and 35.89ns respectively, with a fall time of 12.33ns.
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Diodes DMN2028USS-13 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.8A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 12.33ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 1nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.56W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 35.89ns |
| Turn-On Delay Time | 11.67ns |
| Weight | 0.00261oz |
| Width | 4mm |
| RoHS | Compliant |
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