The DMN2029USD-13 is a 2 N-Channel Junction Field-Effect Transistor with a maximum continuous drain current of 5.8A and a drain to source voltage of 20V. It is packaged in a surface mount SO-8 package and has a maximum operating temperature of 150°C. The device is RoHS compliant and Reach SVHC compliant. The transistor has an input capacitance of 1.171nF and a maximum power dissipation of 1.2W.
PackageSO
MountingSurface Mount
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Technical Specifications
Diodes DMN2029USD-13 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 53.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.5mm |
| Input Capacitance | 1.171nF |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 119.3ns |
| Turn-On Delay Time | 16.5ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN2029USD-13 Datasheet
Download the complete datasheet for Diodes DMN2029USD-13 to view detailed technical specifications.
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