DIODES

DMN2065UW-7

Datasheet

N-Channel JFET, 20V, 2.8A ID, 56mR Rds(on), SOT-323

Diodes

DMN2065UW-7

Name: DMN2065UW-7 Diodes
Brand: Diodes
SKU: DMN2065UW-7

N-Channel JFET, 20V, 2.8A ID, 56mR Rds(on), SOT-323

N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features a 20V Drain to Source Voltage (Vdss) and 2.8A Continuous Drain Current (ID). Offers low Drain to Source Resistance (Rds On Max) of 56mR and a Threshold Voltage of 1V. Packaged in a 3-pin SOT-323 surface mount plastic package, this component operates from -55°C to 150°C. Includes fast switching characteristics with Turn-On Delay Time of 3.5ns and Fall Time of 7.2ns.

PackageSOT-323

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Diodes DMN2065UW-7 technical specifications.

General

Package/Case	SOT-323
Continuous Drain Current (ID)	2.8A
Drain to Source Resistance	140mR
Drain to Source Voltage (Vdss)	20V
Fall Time	7.2ns
Gate to Source Voltage (Vgs)	12V
Height	1mm
Input Capacitance	400pF
Lead Free	Lead Free
Length	2.2mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	430mW
Mount	Surface Mount
Number of Channels	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	56mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Threshold Voltage	1V
Turn-Off Delay Time	23.8ns
Turn-On Delay Time	3.5ns
Weight	0.000212oz
Width	1.35mm