N-Channel Silicon Metal-Oxide Semiconductor FET, 1-Element, Surface Mount Transistor. Features 20V Drain-Source Voltage (Vdss) and 4.2A Continuous Drain Current (ID). Offers low Drain-Source On Resistance (Rds On) up to 38mR. Operates within a temperature range of -55°C to 150°C with a 1V Threshold Voltage. Packaged in a SOT-23-3 plastic package, tape and reel.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Diodes DMN2075U-7 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Diodes DMN2075U-7 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 45mR |
| Fall Time | 6.7ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Input Capacitance | 594.3pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 38mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 28.1ns |
| Turn-On Delay Time | 7.4ns |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN2075U-7 Datasheet
Download the complete datasheet for Diodes DMN2075U-7 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
