N-Channel Silicon Metal-Oxide Semiconductor FET for surface mount applications. Features 20V Drain to Source Voltage (Vdss) and 1.2A Continuous Drain Current (ID). Offers 100mR Drain to Source Resistance (Rds On Max) and 180pF Input Capacitance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 500mW. Packaged in a 3-pin SC-59 (TO-236-3) plastic package, supplied on tape and reel.
PackageTO-236-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN2114SN-7 technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 1.2A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.3mm |
| Input Capacitance | 180pF |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000282oz |
| Width | 1.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN2114SN-7 Datasheet
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