
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Diodes DMN2170U-7 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 217pF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
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