DIODES

DMN2215UDM-7

Datasheet

2-Ch N-Ch JFET, 20V, 2A ID, 165mR RdsOn, SOT-26

Diodes

DMN2215UDM-7

Name: DMN2215UDM-7 Diodes
Brand: Diodes
SKU: DMN2215UDM-7

2-Ch N-Ch JFET, 20V, 2A ID, 165mR RdsOn, SOT-26

N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, 20V Drain-Source Voltage, 2A Continuous Drain Current, 165mΩ Drain-to-Source Resistance, and 100mΩ Rds On Max. This surface mount transistor features a 2-element N-channel configuration with a 12V Gate-to-Source Voltage. Operating across a temperature range of -55°C to 150°C, it offers a maximum power dissipation of 650mW. Packaged in a SOT-26 plastic package, it is supplied on tape and reel.

PackageSOT-26

MountingSurface Mount

PolarityN-CHANNEL

Power650mW

Quick Jump:

Technical Specifications

Diodes DMN2215UDM-7 technical specifications.

General

Package/Case	SOT-26
Continuous Drain Current (ID)	2A
Drain to Source Resistance	165mR
Drain to Source Voltage (Vdss)	20V
Fall Time	3.8ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	12V
Height	1.1mm
Input Capacitance	188pF
Lead Free	Lead Free
Length	3mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	650mW
Mount	Surface Mount
Number of Channels	2
Number of Elements	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	650mW
Rds On Max	100mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Turn-Off Delay Time	19.6ns
Turn-On Delay Time	8ns
Width	1.6mm