N-channel enhancement mode power MOSFET featuring a 20V drain-source voltage and 2.11A continuous drain current. This dual-configuration transistor is housed in a compact 6-pin X2-DFN surface-mount package with a 0.35mm pin pitch. Key electrical characteristics include a maximum gate-source voltage of ±8V and a low gate threshold voltage of 0.95V. The component offers a maximum drain-source on-resistance of 195mΩ at 4.5V gate-source voltage and a typical gate charge of 1.6nC. Operating temperature range spans from -55°C to 150°C.
PackageX2-DFN
MountingSurface Mount
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Technical Specifications
Diodes DMN2300UFL4-7 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | X2-DFN |
| Lead Shape | No Lead |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 1.3 |
| Package Width (mm) | 1 |
| Package Height (mm) | 0.35(Max) |
| Seated Plane Height (mm) | 0.4(Max) |
| Pin Pitch (mm) | 0.35 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 2.11A |
| Maximum Gate Threshold Voltage | 0.95V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 67.6@20VpF |
| Maximum Power Dissipation | 1390mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Diodes DMN2300UFL4-7 Datasheet
Download the complete datasheet for Diodes DMN2300UFL4-7 to view detailed technical specifications.
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