N-Channel Silicon Metal-oxide Semiconductor FET for surface mount applications. Features 20V Drain to Source Voltage (Vdss) and 750mA Continuous Drain Current (ID). Offers 550mR Drain to Source Resistance (Rds On Max) and 36pF Input Capacitance. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 470mW. Packaged in an ultra-small DFN (X1-DFN1006-3) with 3 pins, supplied on tape and reel.
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| Package/Case | DFN |
| Continuous Drain Current (ID) | 750mA |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9.6ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.48mm |
| Input Capacitance | 36pF |
| Lead Free | Lead Free |
| Length | 1.08mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 470mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14.8ns |
| Turn-On Delay Time | 4.11ns |
| Width | 0.675mm |
| RoHS | Compliant |
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