N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET designed for small signal applications. Features include a 20V Drain to Source Voltage (Vdss), 240mA Continuous Drain Current (ID), and a maximum Drain to Source Resistance of 3 Ohms. This surface mount device operates within a temperature range of -55°C to 150°C and boasts a low profile with dimensions of 1.05mm x 0.85mm x 0.45mm. Packaged in a SOT-963 for tape and reel distribution, it offers fast switching with turn-on delay times as low as 3.8ns.
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Diodes DMN26D0UDJ-7 technical specifications.
| Package/Case | SOT-963 |
| Continuous Drain Current (ID) | 240mA |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 15.2ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.45mm |
| Input Capacitance | 14.1pF |
| Lead Free | Lead Free |
| Length | 1.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.4ns |
| Turn-On Delay Time | 3.8ns |
| Width | 0.85mm |
| RoHS | Compliant |
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