N-Channel JFET, designed for small signal applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 240mA. Offers a low drain-source on-resistance (Rds On) of 1.8 Ohms. Packaged in an ultra-small DFN1006H4-3 (3-pin) surface-mount package, measuring 1.05mm x 0.65mm x 0.35mm. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. This component is RoHS and REACH SVHC compliant.
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Diodes DMN26D0UFB4-7 technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 240mA |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 10R |
| Fall Time | 15.2ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.35mm |
| Input Capacitance | 14.1pF |
| Lead Free | Lead Free |
| Length | 1.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.4ns |
| Turn-On Delay Time | 3.8ns |
| Width | 0.65mm |
| RoHS | Compliant |
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