N-Channel JFET, designed for small signal applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 240mA. Offers a low drain-source on-resistance (Rds On) of 1.8 Ohms. Packaged in an ultra-small DFN1006H4-3 (3-pin) surface-mount package, measuring 1.05mm x 0.65mm x 0.35mm. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. This component is RoHS and REACH SVHC compliant.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Diodes DMN26D0UFB4-7 technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
240mA
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
10R
Fall Time
15.2ns
FET Type
1 N-Channel
Gate to Source Voltage (Vgs)
10V
Height
0.35mm
Input Capacitance
14.1pF
Lead Free
Lead Free
Length
1.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
350mW
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
13.4ns
Turn-On Delay Time
3.8ns
Width
0.65mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN26D0UFB4-7 Datasheet
Download the complete datasheet for Diodes DMN26D0UFB4-7 to view detailed technical specifications.
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