DMN26D0UT-7

N-Channel Silicon Metal-oxide Semiconductor FET, 20V Drain-Source Voltage (Vdss) and 230mA Continuous Drain Current (ID). Features 3 Ohm maximum Drain-Source On Resistance (Rds On Max) and 1V Threshold Voltage. This single-element JFET offers fast switching with turn-on delay of 3.8ns and fall time of 15.2ns. Housed in an ultra-small, 0.8mm height, 1.7mm length, 0.85mm width SOT-523 surface mount plastic package. Maximum power dissipation is 300mW with an operating temperature range of -55°C to 150°C.