N-Channel Silicon Metal-oxide Semiconductor FET, 20V Drain-Source Voltage (Vdss) and 230mA Continuous Drain Current (ID). Features 3 Ohm maximum Drain-Source On Resistance (Rds On Max) and 1V Threshold Voltage. This single-element JFET offers fast switching with turn-on delay of 3.8ns and fall time of 15.2ns. Housed in an ultra-small, 0.8mm height, 1.7mm length, 0.85mm width SOT-523 surface mount plastic package. Maximum power dissipation is 300mW with an operating temperature range of -55°C to 150°C.
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Diodes DMN26D0UT-7 technical specifications.
| Package/Case | SOT-523 |
| Continuous Drain Current (ID) | 230mA |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 15.2ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.8mm |
| Input Capacitance | 14.1pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 13.4ns |
| Turn-On Delay Time | 3.8ns |
| Weight | 7.1E-05oz |
| Width | 0.85mm |
| RoHS | Compliant |
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