N-channel enhancement mode MOSFET, single configuration, designed for surface mount applications. Features a 3-pin X2-DFN package with no leads, measuring 0.8mm x 0.6mm x 0.37mm. Offers a maximum drain-source voltage of 20V and a continuous drain current of 0.51A. Key electrical characteristics include a maximum gate-source voltage of ±8V, a maximum gate threshold voltage of 1V, and a maximum drain-source on-resistance of 990mΩ at 4.5V. Power dissipation is rated at 400mW, with an operating temperature range of -55°C to 150°C.
PackageX2-DFN
MountingSurface Mount
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Technical Specifications
Diodes DMN2990UFA-7B technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | X2-DFN |
| Lead Shape | No Lead |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 0.8 |
| Package Width (mm) | 0.6 |
| Package Height (mm) | 0.37 |
| Seated Plane Height (mm) | 0.39 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 0.51A |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 27.6@16VpF |
| Maximum Power Dissipation | 400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Diodes DMN2990UFA-7B Datasheet
Download the complete datasheet for Diodes DMN2990UFA-7B to view detailed technical specifications.
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