N-channel silicon Metal-oxide Semiconductor FET, a single-element JFET with a maximum drain current of 0.25A and a drain-source voltage rating of 20V. This 3-terminal device features bottom terminal positioning and is housed in an X2-DFN0606-3 package.
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Technical Specifications
Diodes DMN2990UFZ-7B technical specifications.
General
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Diodes DMN2990UFZ-7B Datasheet
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