N-channel MOSFET for power applications, featuring a 30V drain-source voltage and 9A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 18mΩ drain-source resistance (Rds On Max) and operates efficiently with a 3.2ns turn-on delay. Packaged in a surface-mount SOP-8 plastic housing, it supports a maximum power dissipation of 2.5W and a wide operating temperature range from -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes DMN3030LSS-13 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes DMN3030LSS-13 technical specifications.
| Package/Case | SOP |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 741pF |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 3.2ns |
| Weight | 0.030018oz |
| Width | 3.95mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMN3030LSS-13 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
