N-channel MOSFET for power applications, featuring a 30V drain-source voltage and 9A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 18mΩ drain-source resistance (Rds On Max) and operates efficiently with a 3.2ns turn-on delay. Packaged in a surface-mount SOP-8 plastic housing, it supports a maximum power dissipation of 2.5W and a wide operating temperature range from -55°C to 150°C.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN3030LSS-13 technical specifications.
General
| Package/Case | SOP |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 741pF |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 3.2ns |
| Weight | 0.030018oz |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN3030LSS-13 Datasheet
Download the complete datasheet for Diodes DMN3030LSS-13 to view detailed technical specifications.
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