N-channel MOSFET for power applications, featuring a 30V drain-source voltage and 9A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 18mΩ drain-source resistance (Rds On Max) and operates efficiently with a 3.2ns turn-on delay. Packaged in a surface-mount SOP-8 plastic housing, it supports a maximum power dissipation of 2.5W and a wide operating temperature range from -55°C to 150°C.
PackageSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN3030LSS-13 technical specifications.
General
Package/Case
SOP
Continuous Drain Current (ID)
9A
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
30V
Fall Time
14ns
Gate to Source Voltage (Vgs)
25V
Height
1.5mm
Input Capacitance
741pF
Length
4.95mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
18ns
Turn-On Delay Time
3.2ns
Weight
0.030018oz
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN3030LSS-13 Datasheet
Download the complete datasheet for Diodes DMN3030LSS-13 to view detailed technical specifications.
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