N-channel silicon Metal-oxide Semiconductor FET, a power field-effect transistor, offers a 30V drain-to-source voltage and 5.8A continuous drain current. Featuring a low 38mΩ drain-to-source resistance, this 1-element JFET is designed for surface mounting in a compact SOT-23-3 plastic package. Key electrical characteristics include 424pF input capacitance, 2.8ns fall time, and 13.9ns turn-off delay time. Operating across a temperature range of -55°C to 150°C, this RoHS and REACH SVHC compliant component is supplied on tape and reel.
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Diodes DMN3051L-7 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 424pF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.9ns |
| Turn-On Delay Time | 3.4ns |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
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