DMN3051L-7

N-channel silicon Metal-oxide Semiconductor FET, a power field-effect transistor, offers a 30V drain-to-source voltage and 5.8A continuous drain current. Featuring a low 38mΩ drain-to-source resistance, this 1-element JFET is designed for surface mounting in a compact SOT-23-3 plastic package. Key electrical characteristics include 424pF input capacitance, 2.8ns fall time, and 13.9ns turn-off delay time. Operating across a temperature range of -55°C to 150°C, this RoHS and REACH SVHC compliant component is supplied on tape and reel.