The DMN3051LDM-7 is a single N-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4A and a drain to source resistance of 64mR. The device is packaged in a SOT-23-6 package and is RoHS compliant. It is not radiation hardened and is not Reach SVHC compliant. The transistor has an input capacitance of 424pF and a maximum power dissipation of 900mW.
PackageSOT-23-6
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN3051LDM-7 technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 424pF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN3051LDM-7 Datasheet
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