N-Channel Silicon Metal-oxide Semiconductor FET for surface mount applications. Features 30V Drain to Source Voltage (Vdss) and 4.2A Continuous Drain Current (ID). Offers low Drain to Source On-Resistance (Rds On) of 24mR. Packaged in a compact TO-236-3 (SC-59) with 3 pins, ideal for space-constrained designs. Operating temperature range from -55°C to 150°C.
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| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.1ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.3mm |
| Input Capacitance | 697pF |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 4.4ns |
| Turn-On Delay Time | 4.3ns |
| Weight | 0.000282oz |
| Width | 1.7mm |
| RoHS | Compliant |
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