Power Field-Effect Transistor, 6A I(D), 30V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
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Diodes DMN3112SSS-13 technical specifications.
| Package/Case | SOP |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 57mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 268pF |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 57mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Weight | 0.030018oz |
| Width | 3.9mm |
| RoHS | Compliant |
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