N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23-3 package. Features a continuous drain current of 2.2A, a drain-to-source voltage of 30V, and a low drain-to-source resistance of 90mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 650mW. Input capacitance is 290pF, and the device is RoHS and REACH SVHC compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Diodes DMN3200U-7 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Diodes DMN3200U-7 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 290pF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 650mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Weight | 0.000282oz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN3200U-7 Datasheet
Download the complete datasheet for Diodes DMN3200U-7 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
