N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23-3 package. Features a continuous drain current of 2.2A, a drain-to-source voltage of 30V, and a low drain-to-source resistance of 90mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 650mW. Input capacitance is 290pF, and the device is RoHS and REACH SVHC compliant.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN3200U-7 technical specifications.
General
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Input Capacitance | 290pF |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 650mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Weight | 0.000282oz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN3200U-7 Datasheet
Download the complete datasheet for Diodes DMN3200U-7 to view detailed technical specifications.
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