N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET designed for surface mounting in a SOT-353 package. Features a continuous drain current of 400mA, drain-to-source voltage of 30V, and a maximum drain-to-source resistance of 1.2 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 280mW. Includes a gate-to-source voltage of 10V and an input capacitance of 39pF. This component is RoHS and REACH SVHC compliant.
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| Package/Case | SOT-353 |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1mm |
| Input Capacitance | 39pF |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Width | 1.35mm |
| RoHS | Compliant |
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