N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features 30V Drain to Source Voltage (Vdss) and 2A Continuous Drain Current (ID). Offers low Drain to Source Resistance (Rds On) of 150mR. Operates with a Gate to Source Voltage (Vgs) up to 12V and boasts fast switching times with a 7ns Turn-On Delay Time and 24ns Fall Time. Packaged in a compact SOT-23-3 surface mount plastic package, this RoHS and REACH SVHC compliant component is ideal for various electronic designs.
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| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 193pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
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