N-channel MOSFET, 30V drain-source voltage, 5.8A continuous drain current, and 28mΩ maximum drain-source on-resistance. Features a 1.5V nominal gate-source voltage and 1.4W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a 3-pin SOT-23 surface-mount plastic package, suitable for tape and reel packaging. Operating temperature range is -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
Diodes DMN3404L-7 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
5.8A
Drain to Source Resistance
82mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
28mR
Fall Time
6.18ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
386pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Nominal Vgs
1.5V
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.4W
Rds On Max
28mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.5V
Turn-Off Delay Time
13.92ns
Turn-On Delay Time
3.41ns
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN3404L-7 Datasheet
Download the complete datasheet for Diodes DMN3404L-7 to view detailed technical specifications.
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