N-channel MOSFET, 30V drain-source voltage, 5.8A continuous drain current, and 28mΩ maximum drain-source on-resistance. Features a 1.5V nominal gate-source voltage and 1.4W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is housed in a 3-pin SOT-23 surface-mount plastic package, suitable for tape and reel packaging. Operating temperature range is -55°C to 150°C.
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Diodes DMN3404L-7 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Resistance | 82mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 28mR |
| Fall Time | 6.18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 386pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Rds On Max | 28mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 13.92ns |
| Turn-On Delay Time | 3.41ns |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
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