N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a 30V Drain-to-Source Voltage (Vdss) and 940mA Continuous Drain Current (ID). Offers a low Drain-to-Source On-Resistance (Rds On) of 460mR. Packaged in a 3-pin SOT-23 surface mount package, this component operates within a temperature range of -55°C to 150°C and supports tape and reel packaging. Compliant with RoHS and REACH SVHC standards.
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| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 940mA |
| Drain to Source Resistance | 460mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Input Capacitance | 64.3pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 460mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 3.5ns |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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