The DMN3900UFA-7B is a single N-channel junction field-effect transistor with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 650mA and a drain to source voltage of 30V. The device has a drain to source resistance of 760mR and a maximum power dissipation of 390mW. It is packaged in a lead-free DFN package and is suitable for surface mount applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes DMN3900UFA-7B datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | DFN |
| Continuous Drain Current (ID) | 650mA |
| Drain to Source Resistance | 760mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 23.4ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 42.2pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 390mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 760mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 80.6ns |
| Turn-On Delay Time | 10.5ns |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMN3900UFA-7B to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
