N-Channel Power MOSFET, featuring a 40V drain-source voltage and 5.2A continuous drain current. Offers a low 31mΩ drain-source on-resistance. This surface-mount device operates across a wide temperature range from -55°C to 150°C. Includes two N-channel elements with a maximum power dissipation of 1.42W.
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Diodes DMN4031SSD-13 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 31mR |
| Fall Time | 3.1ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 945pF |
| Lead Free | Lead Free |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.42W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 31mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19.8ns |
| Turn-On Delay Time | 6.4ns |
| Weight | 0.00261oz |
| Width | 3.95mm |
| RoHS | Compliant |
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