N-channel MOSFET with 40V drain-source voltage and 12.2A continuous drain current. Features low 26mΩ drain-to-source resistance and 3.2ns turn-on delay. This silicon, metal-oxide semiconductor FET is designed for surface mounting in a TO-252-3 package. Operates from -55°C to 150°C with a maximum power dissipation of 2.12W.
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Diodes DMN4036LK3-13 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 12.2A |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 9.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 453pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.12W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 11.6ns |
| Turn-On Delay Time | 3.2ns |
| Weight | 0.139332oz |
| Width | 6.22mm |
| RoHS | Compliant |
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