
N-Channel MOSFET, 30V Vdss, 10A continuous drain current, and 14mΩ Rds On. This silicon Metal-Oxide-Semiconductor FET features a 1-element design with a maximum power dissipation of 1.52W and an operating temperature range of -55°C to 150°C. Packaged in a green, plastic SOP-8 (SOIC) surface-mount case, it offers fast switching with turn-on delay of 5.46ns and turn-off delay of 18.84ns. This component is RoHS and REACH SVHC compliant.
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Diodes DMN4468LSS-13 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14.53ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 867pF |
| Lead Free | Lead Free |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | DMN44 |
| Turn-Off Delay Time | 18.84ns |
| Turn-On Delay Time | 5.46ns |
| Weight | 0.00261oz |
| Width | 3.95mm |
| RoHS | Compliant |
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