N-Channel MOSFET, 30V Vdss, 8.6A continuous drain current, and 16mΩ Rds On. This silicon, metal-oxide semiconductor FET features a 1-element configuration and is housed in a GREEN, PLASTIC, SOP-8 package for surface mounting. Key electrical characteristics include a 4.5ns fall time, 5.03ns turn-on delay, and 26.33ns turn-off delay, with an input capacitance of 798pF. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 1.46W. This component is RoHS and REACH SVHC compliant.
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Diodes DMN4800LSS-13 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.5mm |
| Input Capacitance | 798pF |
| Lead Free | Lead Free |
| Length | 4.95mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.46W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26.33ns |
| Turn-On Delay Time | 5.03ns |
| Weight | 0.00261oz |
| Width | 3.95mm |
| RoHS | Compliant |
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