N-channel silicon JFET for small signal applications. Features 50V drain-source voltage (Vdss) and 160mA continuous drain current (ID). Offers 4Ω drain-source resistance (Rds On Max) and 800mV threshold voltage. Packaged in a compact SOT-523 surface-mount plastic package, operating from -55°C to 150°C. RoHS compliant with 25pF input capacitance and 200mW power dissipation.
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Diodes DMN55D0UT-7 technical specifications.
| Package/Case | SOT-523 |
| Continuous Drain Current (ID) | 160mA |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 50V |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.75mm |
| Input Capacitance | 25pF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 800mV |
| Weight | 0.000282oz |
| Width | 0.8mm |
| RoHS | Compliant |
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