DIODES

DMN55D0UT-7

Datasheet

N-Channel JFET, 50V, 160mA ID, 4Ω Rds(on), SOT-523

Diodes

DMN55D0UT-7

Name: DMN55D0UT-7 Diodes
Brand: Diodes
SKU: DMN55D0UT-7

N-Channel JFET, 50V, 160mA ID, 4Ω Rds(on), SOT-523

N-channel silicon JFET for small signal applications. Features 50V drain-source voltage (Vdss) and 160mA continuous drain current (ID). Offers 4Ω drain-source resistance (Rds On Max) and 800mV threshold voltage. Packaged in a compact SOT-523 surface-mount plastic package, operating from -55°C to 150°C. RoHS compliant with 25pF input capacitance and 200mW power dissipation.

PackageSOT-523

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Diodes DMN55D0UT-7 technical specifications.

General

Package/Case	SOT-523
Continuous Drain Current (ID)	160mA
Drain to Source Resistance	4R
Drain to Source Voltage (Vdss)	50V
Gate to Source Voltage (Vgs)	12V
Height	0.75mm
Input Capacitance	25pF
Lead Free	Lead Free
Length	1.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Mount	Surface Mount
Number of Channels	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	4R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Threshold Voltage	800mV
Weight	0.000282oz
Width	0.8mm