N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET designed for small signal applications. Features a continuous drain current of 305mA and a drain-source voltage rating of 50V. Offers a maximum drain-source on-resistance of 2.5 Ohms. Housed in a compact SOT-26 surface-mount plastic package, this RoHS compliant component operates within a temperature range of -65°C to 150°C.
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Diodes DMN5L06DMK-7 technical specifications.
| Package/Case | SOT-26 |
| Continuous Drain Current (ID) | 305mA |
| Current Rating | 305mA |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 2.5R |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 400mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 400mW |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| Resistance | 2.5R |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Width | 1.6mm |
| RoHS | Compliant |
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