N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element, 2-channel JFET designed for small signal applications. Features a 50V drain-source voltage (Vdss) and a continuous drain current (ID) of 305mA. Offers a maximum drain-source on-resistance (Rds On) of 2 Ohms and a threshold voltage of 1V. Packaged in an ultra-small SOT-363 surface-mount plastic package, this RoHS compliant component operates from -65°C to 150°C with a power dissipation of 250mW.
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Diodes DMN5L06DWK-7 technical specifications.
| Package/Case | SOT-363 |
| Continuous Drain Current (ID) | 305mA |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 2R |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 14.4ns |
| Turn-On Delay Time | 2.1ns |
| DC Rated Voltage | 50V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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