DIODES

DMN5L06DWK-7

Datasheet

N-Channel JFET, 50V, 305mA, 2-Element, SOT-363

Diodes

DMN5L06DWK-7

Name: DMN5L06DWK-7 Diodes
Brand: Diodes
SKU: DMN5L06DWK-7

N-Channel JFET, 50V, 305mA, 2-Element, SOT-363

N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element, 2-channel JFET designed for small signal applications. Features a 50V drain-source voltage (Vdss) and a continuous drain current (ID) of 305mA. Offers a maximum drain-source on-resistance (Rds On) of 2 Ohms and a threshold voltage of 1V. Packaged in an ultra-small SOT-363 surface-mount plastic package, this RoHS compliant component operates from -65°C to 150°C with a power dissipation of 250mW.

PackageSOT-363

MountingSurface Mount

PolarityN-CHANNEL

Power250mW

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Technical Specifications

Diodes DMN5L06DWK-7 technical specifications.

General

Package/Case	SOT-363
Continuous Drain Current (ID)	305mA
Drain to Source Resistance	3R
Drain to Source Voltage (Vdss)	50V
Drain-source On Resistance-Max	2R
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	50pF
Lead Free	Lead Free
Length	2.2mm
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	250mW
Mount	Surface Mount
Number of Channels	2
Number of Elements	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	250mW
Radiation Hardening	No
Rds On Max	2R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Threshold Voltage	1V
Turn-Off Delay Time	14.4ns
Turn-On Delay Time	2.1ns
DC Rated Voltage	50V
Weight	0.000212oz
Width	1.35mm