N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element, 2-channel JFET designed for small signal applications. Features a 50V drain-source voltage (Vdss) and a continuous drain current (ID) of 305mA. Offers a maximum drain-source on-resistance (Rds On) of 2 Ohms and a threshold voltage of 1V. Packaged in an ultra-small SOT-363 surface-mount plastic package, this RoHS compliant component operates from -65°C to 150°C with a power dissipation of 250mW.
PackageSOT-363
MountingSurface Mount
PolarityN-CHANNEL
Power250mW
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Technical Specifications
Diodes DMN5L06DWK-7 technical specifications.
General
Package/Case
SOT-363
Continuous Drain Current (ID)
305mA
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
2R
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
250mW
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
Turn-Off Delay Time
14.4ns
Turn-On Delay Time
2.1ns
DC Rated Voltage
50V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN5L06DWK-7 Datasheet
Download the complete datasheet for Diodes DMN5L06DWK-7 to view detailed technical specifications.
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