N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a 50V drain-source voltage (Vdss) and 300mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 2 Ohms. Operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 350mW. Packaged in a 3-pin SOT-23 surface-mount plastic package, supplied on tape and reel.
PackageSOT-23
Current Rating300mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN5L06K-7 technical specifications.
General
Package/Case
SOT-23
Continuous Drain Current (ID)
300mA
Current Rating
300mA
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
2R
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
2.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
350mW
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
DC Rated Voltage
50V
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN5L06K-7 Datasheet
Download the complete datasheet for Diodes DMN5L06K-7 to view detailed technical specifications.
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