N-Channel JFET, surface mount, SOT-523 package. Features 50V Drain-Source Voltage (Vdss), 280mA Continuous Drain Current (ID), and 2Ω Drain-Source Resistance (Rds On Max). Operates from -55°C to 150°C with 150mW power dissipation. Single element, silicon construction with 50pF input capacitance.
Diodes DMN5L06TK-7 technical specifications.
| Package/Case | SOT-523 |
| Continuous Drain Current (ID) | 280mA |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 50V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 50pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMN5L06TK-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
