N-Channel Silicon JFET, 2-element, surface mount transistor with 50V Drain to Source Voltage (Vdss) and 280mA Continuous Drain Current (ID). Features 2 Ohm Drain to Source Resistance (Rds On Max) and 20V Gate to Source Voltage (Vgs). Housed in an ultra-small, 6-pin SOT-563 plastic package, this RoHS compliant component offers a max power dissipation of 250mW and operates from -55°C to 150°C.
PackageSOT-563
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN5L06VAK-7 technical specifications.
General
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 280mA |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 50V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Weight | 0.000106oz |
| Width | 1.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN5L06VAK-7 Datasheet
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