N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, 2-Channel, Surface Mount device in a SOT-563 package. Features 50V Drain to Source Voltage (Vdss), 280mA Continuous Drain Current (ID), and 2 Ohm Drain-source On Resistance-Max. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 250mW. Includes 50pF input capacitance and 1V threshold voltage.
PackageSOT-563
Current Rating280mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN5L06VK-7 technical specifications.
General
Package/Case
SOT-563
Continuous Drain Current (ID)
280mA
Current Rating
280mA
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
2R
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
1.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
250mW
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
DC Rated Voltage
50V
Weight
0.000106oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN5L06VK-7 Datasheet
Download the complete datasheet for Diodes DMN5L06VK-7 to view detailed technical specifications.
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