N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, 2-Channel, Surface Mount device in a SOT-563 package. Features 50V Drain to Source Voltage (Vdss), 280mA Continuous Drain Current (ID), and 2 Ohm Drain-source On Resistance-Max. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 250mW. Includes 50pF input capacitance and 1V threshold voltage.
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Diodes DMN5L06VK-7 technical specifications.
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 280mA |
| Current Rating | 280mA |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 2R |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| DC Rated Voltage | 50V |
| Weight | 0.000106oz |
| Width | 1.2mm |
| RoHS | Compliant |
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